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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB824 DESCRIPTION With TO-220 package Low collector-emitter saturation voltage Complement to type 2SD1060 APPLICATIONS Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) SEM GE Open base CONDITIONS Open emitter OND IC TOR UC VALUE -60 -50 -6 -5 -9 UNIT V V V A A W ae ae Open collector Collector power dissipation Junction temperature Storage temperature TC=25ae 30 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance CONDITIONS IC=-1mA ;RBE= IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-3A; IB=-0.3A VCB=-40V;IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-3A ; VCE=-2V IE=0 ; VCB=-10V;f=1MHz IC=-1A ; VCE=-5V 70 30 MIN -50 -60 -6 TYP. 2SB824 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 COB fT MAX UNIT V V V -0.4 -0.1 -0.1 280 V mA mA Switching times ton ts tf Transition frequency Turn-on time Storage time Fall time HAN INC R 100-200 S 140-280 SEM GE OND IC TOR UC 30 0.1 0.7 0.2 160 pF MHz |I |I |I s s s IC=-2.0A; IB1=- IB2=-0.2A hFE-1 classifications Q 70-140 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB824 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB824 SEM GE HAN INC OND IC TOR UC 4 |
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